Date: 16/08/2011

2 Amp rated power transistor and N type Trench MOSFET in a 2mmx2mm package

NXP Semiconductors N.V. has launched the PBSM5240PF, an ultra-compact Medium Power transistor and N-channel Trench MOSFET housed in a leadless DFN2020-6 (SOT1118) plastic package. Measuring 2 x 2 mm and with a height of just 0.65 mm, the DFN2020-6 (SOT1118) has been designed in response to the industry trend for miniaturization in high-performance consumer products such as mobile devices.

NXP says as one of the first power management solutions on the market to integrate a low VCE(sat) BISS transistor and Trench MOSFET into a 2-in-1 product, the PBSM5240PF saves space on the PCB, while delivering high electrical performance.

Compared to conventional solutions, which require two packages for the Breakthrough in Small Signal (BISS)/MOSFET solution, the PBSM5240PF offers a more than 50 percent reduction in footprint and more than 10 percent decrease in package height, claims NXP. DFN2020-6 (SOT1118) is fitted with heat sink to deliver 25 percent improved thermal performance leading to higher currents up to 2 A and less power consumption.

The PBSM5240PF is used as part of the charging circuit in portable batteries for cell phones, MP3 players or other portable devices. It can also be used in load switch or battery-driven devices that require best-in-class thermal performance for higher currents with a tiny footprint.

"What makes the BISS/MOSFET solution both unique and attractive to the portable devices industry is its tiny footprint combined with impressive electrical and thermal performance in a leadless package. With a maximum voltage of 40 volts, this integrated package is ideally suited for today's miniaturized, slimline mobile devices, where height and board space are serious design constraints and every millimeter is at a premium," said Joachim Stange, product manager, NXP Semiconductors.

Other features and specifications:

Key features of the PBSM5240PF BISS transistor and N-channel Trench MOSFET include:

High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Very low collector-emitter saturation voltage VCEsat
DFN2020-6 package in 2 x 2 mm requires less Printed-Circuit Board (PCB) area

Availability: Available immediately from key distributors worldwide.