Date: 10/04/2011

Kilopass makes testchip of its 2T antifuse using TSMC 28nm HKMG process

Kilopass Technology Inc. has announced that its first test chip silicon on TSMC 28nm High-K Metal Gate (HKMG) has demonstrated that its 2T antifuse technology is scalable to HKMG. Kilopass said this tech can scale to 22nm and beyond.

"We are extremely pleased with the 2T antifuse silicon results on TSMC 28nm HKMG process," said Harry Luan, CTO at Kilopass. "The testchip silicon contained a variety of 2T bit cell for fundamental device study and cell modeling. Silicon results show that Kilopass' 2T technology in HKMG has excellent programming distribution and no program disturb behavior is observed. In addition, the gate leakage is significantly reduced from previous process generations which will contribute to a better read margin and high incoming yield."

Kilopass says its embedded NVM is implemented in standard CMOS without any additional backend process steps. It is designed for manufacturability for mass production; it follows foundry DFM design rules, utilizes standard devices supplied by the foundry, and requires no additional overlay tolerance or process control. Over two billion integrated circuits with Kilopass 2T antifuse technology from 0.18um to 40nm have shipped in consumer, automotive, mobile, and analog mixed signal products. At 28nm HKMG, silicon results show Kilopass embedded NVM technology will continue to be implemented in standard CMOS and scale in area and power with the 28nm HKMG process.

Kilopass XPM and Gusto memory IP for TSMC 28nm HKMG process will be available for licensing in second half of 2011.
To learn more visit www.kilopass.com.