Date: 03/04/2011

Diodes packs 3 of its MOSFETs in less space consuming DFN3020 package

Diodes Incorporated has introduced 3 of its dual MOSFETs in DFN3020 package. These include the ZXMN2AMC (dual 20V N-channel), ZXMN3AMC (dual 30V N-channel), and ZXMC3AMC (complementary 30V) DFN3020 packaged MOSFETs. With a junction to ambient thermal resistance of 83ºC/W these MOSFETs in DFN3020 package dissipate power up to 2.4W continuous and operating temperature stays less than SOT23 package.

Diodes says while offering a comparable electrical performance as much larger SOT23 packaged parts, these dual DFN3020 MOSFETs will replace two separate SOT23 packaged MOSFETs, resulting in a board space saving of 70%.

With a footprint of just 6mm2 and an off-board height of 0.8mm, some 40% less than SOT23 or TSOP-6 packaged parts, the DFN3020 MOSFET portfolio will suit load switch or boost conversion circuits in space-constrained low profile portable consumer electronics including tablets and netbooks, suggests Diodes.

The complementary DFN3020 MOSFETs are also suggested for use in half bridge mode for driving motor loads in industrial applications.

For more info visit www.diodes.com