Date: 27/01/2011

Heterojunction FET for 20 GHz Satellite Broadcast receivers

Renesas has made available its ultralow-noise heterojunction field effect transistor (FET) product, the NE3520S03 features a semiconductor chip with an epitaxial structure) that speeds up the electron velocity and substantially reduces the source resistance.

This device uses hollow plastic package to allow easy replacement of Renesas Electronics' existing NE3517S03 product. NE3520S03 feature a noise figure (NF) value of 0.65 decibels (dB), which is 0.05 dB lower than the existing product and among the lowest in the world for a mass produced product designed for the 20 gigahertz (GHz) band, claims Renesas. This device improves reception sensitivity in products such as high-definition (HD) TV broadcasting equipment.

Availability: Now in samples and volumes in March 2011