Date: 03/12/2010

4Gb LPDDR2 DRAM with speed of 1,066 Mbps from Samsung

Samsung has developed a low power double-data-rate 2 (LPDDR2) DRAM using 30nm process node. Samsung is sampling this chip targeting high-end mobile applications such as smartphones and tablet computers. Chips such as these enhance the computing performance of new formfactor based handhelds by getting them close to notebook computing level.

"The mobile device market is gaining momentum with the advent of tablet PCs, which is adding significantly to the already surging smartphone segment," said Jun-Young Jeon, vice president, memory product planning team, Samsung Electronics. "Samsung will work closely with mobile device designers to bring high-performance, high-density mobile solutions to market as rapidly as possible."

Samsung claims this is industry's first such device with more than double the performance of the industry's previous mobile DRAM - MDDR, which operates between 333Mbps and 400Mbps.

Starting this month, Samsung also said it will begin sampling 8Gb LPDDR2 DRAM by stacking two 4Gb chips in a single package, as it is expected that 8Gb will become the mainstream density for the mobile DRAM market next year.

Until now, an 8Gb (1GB) LPDDR2 DRAM used four 2Gb chips. With the new Green 4Gb LPDDR2, the 8Gb solution offers a 20 percent package height reduction (0.8mm vs. 1.0mm) and will save 25 percent of the power consumed by the previous 8Gb package that used four 2Gb chips according to Samsung.