Date: 11/11/2010

Vishay launches its asymmetric dual TrenchFET power MOSFET in PowerPAIR package

Vishay Intertechnology, Inc. has unveiled the asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package. This power MOSFET utilizes the TrenchFET Gen III technology and is stated to reduce on-resistance by 43% when compared to previous-generation devices. The SiZ710DT combines a low- and high-side MOSFET in one compact device.

A single PowerPAK 1212-8 or SO-8 has on-resistance of 5 mohms or 4 mohms range, respectively. However, the low-side Channel 2 MOSFET of the SiZ710DT utilizes the optimized space from the asymmetric structure and offers a lower on-resistance of 3.3 mohms at 10 V and 4.3 mohms at 4.5V, and a maximum current of 30 A at + 25°C and 24 A at + 70°C. The high-side Channel 1 MOSFET also features on-resistance of 6.8 mohms at 10 V and 9.0 mohms at 4.5V.

The device is 100% Rg and UIS tested, compliant to RoHS directive 2002/95/EC, and halogen-free according to IEC 61249-2-21.

Vishay is demonstrating the PowerPAIR package in a synchronous buck circuit at its electronica 2010 stand A5-143.

Channel VDS VGS RDS(ON)@
10 V RDS(ON)@
4.5 V Qg(typ) ID@ TA= 25 °C ID@ TA=70 °C
1 20 V ± 20 V 6.8 mO 9.0 mO 6.9 nC 16 A 15 A
2 20 V ± 20 V 3.3 mO 4.3 mO 18.2 nC 30 A 24 A


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