Date: 04/11/2010

600 V, 47A, n-channel MOSFET from Vishay with on-resistance of 0.07 Ohms

Vishay Intertechnology has introduced a new 600 V, 47 Amps n-channel power MOSFET with ultra-low maximum on-resistance of 0.07 ohms at a 10 V gate drive and an improved gate charge of 216 nC in the TO-247 package. The SiHG47N60S’s 15.12 ohm-nC gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is the industry’s lowest for this device type, says Vishay.

The low on-resistance character of this SiHG47N60S makes it suitable for range of power electronic applications such as inverter circuits and pulsewidth modulation (PWM) full-bridge topologies in solar and wind inverters, and telecom, server, and motor control power applications.

The new SiHG47N60S withstands high energy pulse in the avalanche and commutation mode and is compliant to RoHS Directive 2002/95/EC and 100% avalanche tested for reliable operation.

Available: Now