Date: 14/10/2010

Vishay introduces four new n-channel power MOSFETs with on resistance of 0.38 Ohms

Vishay Intertechnology has released four new 500-V, 16-A n-channel power MOSFETs with on-resistance of 0.38Ohms maximum at a 10-V gate drive, and gate charge of 68 nC, in the TO-220AB,TO-220 FULLPAK, D²PAK, and TO-247AC packages.

The four power MOSFETs include SiHP16N50C (TO-220AB), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC). These power MOSFETs are suggested to save energy in power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies.

The new n-channel MOSFETs are manufactured using Vishay Planar Cell technology. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C power MOSFETs offer fast switching speeds and reduced switching losses. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is 25.84Ohms-nC.


The devices are compliant to RoHS Directive 2002/95/EC and 100 % avalanche tested for reliable operation.

Availability: Now