Date: 29/09/2010

2GB DDR3 SDRAM from Elpida made using 30nm process

Elpida Memory, Inc. has developed a 30nm process, 2-gigabit DDR3 SDRAM. This SDRAM is developed using the 30nm-level process migration technology, which according to Elpida can acheive 45% more chips per wafer as compared with Elpida's 40nm process products.

Elpida's new chip meets the JEDEC specs for the DDR3-1866 and 1.35V, DDR3L-1600 memory chips, both expected to become mainstream industry products in 2011. The release says that the DDR3 SDRAM is it achieves approximately 15% less operating current and approximately 10% less standby current as compared with Elpida's 40nm products.

Availability: Sampling in December 2010.