Date: 24/09/2010

600W, UHF range RF transistor from NXP Semiconductor for broadcast transmitters

NXP Semiconductors has made available an Ultra High Frequency (UHF) RF power transistor; the BLF888A, a 600W LDMOS device for broadcast transmitters and industrial applications. NXP says BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the full UHF band from 470 to 860MHz, the transistor can deliver 120W average power with efficiencies greater than 31 percent. This device is praised for its high linearity, high gain of 21dB and outstanding ruggedness corresponding to VSWR greater than 40:1. The ideal applications of BLF888A are advanced digital transmitter applications, such as DVB-T. NXP to display BLF888A at the European Microwave Week happening from September 26 - October 1, 2010 in Paris.
This power packed LDMOS transistor offers thermal resistance as low as 0.15K/W. For complete power amplifier line-ups, the BLF888A combines optimally with the BLF881 driver transistor.

"We have achieved something very special with the BLF888A, by being able to combine excellent ruggedness with broadband power and efficiency," said Mark Murphy, director of marketing for RF power products, NXP Semiconductors. "In the past, designers would have had to trade these parameters off against each other, yielding a sub-optimal solution. Now with the BLF888A, broadcast transmitter architects around the world have the option to optimize the RF system level performance without having to worry about the power transistor."

The new transistor is available in two versions: a bolt-down package - BLF888A and an earless package - BLF888AS, which enables a more compact PCB design. The BLF888AS can be soldered to achieve a further decrease in junction temperature.

Availability: Now