Date: 22/09/2010

New RF switching module from IXYS operates up to 30MHz in class D and E mode.

IXYS has announced that its IXYSRF division has released the latest addition to their "4DF" line of integrated driver/MOSFET RF Power Modules. The IXZ421DF12N100 utilizes the same IXYSRF driver IC found in the DEIC421 and a 1000V 12A MOSFET in combination, thus providing a RF switching module with reduced part counts and small footprint. The IXZ421DF12N100 can be operated up to switching frequencies of 30MHz in class D and E RF applications.

"By utilizing the 421 driver IC we have been able to simplify the drive requirements for the module while maintaining the excellent RF power performance achieved through the integration of the driver and MOSFET combined with the isolated DCB based, high efficiency RF Package for which IXYSRF is known," Said Stephen Krausse, General Manager of IXYSRF.

The IXZ421DF12N100 contains a 12A, 1000V MOSFET coupled with the DEIC421 driver IC for short propagation delays and accurate switching thresholds. The RF switching module integrates both the driver and MOSFET into a single package, thus minimizing the stray inductance between the driver and the gate of the MOSFET.

The DEIC421 driver die has been designed with low propagation delays, fast switching and high drive current. The driver section can be operated from 10V to 18V and has Kelvin ground connections that eliminate false triggering. The DEIC421 driver die has rise and fall times of less than 4 ns and is suitable for high power, short pulse and switching applications. The low capacitance of the 12N100 MOSFET die reduces required drive current and improves the module's efficiency.

The IXZ421DF12N100 comes in a SMD package.