Date: 10/09/2010

30V P-channel power MOSFET devices from IR

International Rectifier has unveiled a new family of -30 V devices featuring IR’s P-channel MOSFET silicon. Packed in a SO-8 package, these 30V devices are suitable for battery charge and discharge switches, and system/load switches used in DC applications.

These 30V P-channel devices offer on-state resistance (RDS(on)) from 4.6 mOhm up to 59 mOhm. P-channel MOSFETs eliminate the need for level shifting or charge pump circuitries making them a highly desirable solution for system/load switch applications. These 30V P-channel MOSFET devices are qualified to moisture sensitivity level 1 (MSL1) and is lead free and RoHS compliant.

“This new SO-8 P-channel MOSFET family delivers a strong improvement in current handling compared to previous generation devices to offer customers a wide range of RDS(on) options to suit their thermal and cost requirements while the P-channel technology helps simplify design circuitry,” said George Feng, marketing engineer for IR’s Power Management Devices Business Unit.


Specifications

Part Number Package BV (V) Max Vgs (V) Typ. / Max
RDSon @ -10V
(mOhms) Typ. / Max
RDSon @ -4.5V
(mOhms)
IRF9310 SO-8 -30 20 3.9 / 4.6 5.8 / 6.8
IRF9317 SO-8 -30 20 5.4 / 6.6 8.3 / 10.2
IRF9321 SO-8 -30 20 5.9 / 7.2 9.3 / 11.2
IRF9328 SO-8 -30 20 10.0 / 11.9 16.1 / 19.7
IRF9332 SO-8 -30 20 13.6 / 17.5 22.5 / 28.1
IRF9333 SO-8 -30 20 15.6 / 19.4 25.6 / 32.5
IRF9335 SO-8 -30 20 48 / 59 83 / 110
IRF9362 SO-8 (dual) -30 20 17.0 / 21.0 25.7 / 32


Price: Starts at each US$0.43 for 1K pieces ( vendor says prices are subject to change).

Availability: Now