Date: 10/08/2010

N-channel chipscale power MOSFET from Vishay

Vishay has unveiled the 20-V MICRO FOOT Si8800EDB power MOSFET, which Vishay claim is the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm2 outline. This MOSFET combines an ultra-small 0.8-mm by 0.8-mm outline with a height of 0.357 mm to save space in portable electronics.

The Si8800EDB power MOSFET is a part of Vishay's TrenchFET power MOSFET. This power MOSFET features typical ESD protection of 1500 V, is compliant to RoHS Directive 2002/95/EC, and is halogen-free according to the IEC 61249-2-21 Definition.

Vishay says that the Si8800EDB has a ultra-small outline and height, is 36 % smaller and 11 % thinner than the next smallest n-channel device in a chipscale package, allowing for the creation of more compact end products with increased functionality.

The chipscale packaging of the Si8800EDB provides an extremely low on-resistance per area due to its packageless technology and increased die area. The MOSFET offers maximum on-resistance values of 80 mO at 4.5 V, 90 mO at 2.5 V, 105 mO at 1.8 V, and 150 mO at 1.5 V.

This power MOSFET is suitable for applications in new device that include load switches and small signal switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The Si8800EDB's low on-resistance prolongs battery life between charges in these products.

Availability: Samples of the new power MOSFET are available now. Production quantities will be available in Q2 2010.