Date: 22/07/2010

Samsung starts production of 2GB DDR3 DRAM

Samsung has begun mass production of its first two-gigabit (Gb) Green DDR3 using 30nanometer (nm) class process technology.

"We're seeing a sharp rise in demand for DDR3 chips and are meeting that need with the timely introduction of 30nm-class Green DDR3 solutions," said Soo-In Cho, president, Memory Division, Semiconductor Business, Samsung Electronics. "Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors."

The features of Samsung's 30nm-class 2Gb Green DDR3 ICs include:
1. The memory modules can reach up to 1.866 gigabits per second (Gbps) at 1.35 volts, while PC modules can run at up to 2.133Gbps (1.5 volts), which is 3.5 times faster than DDR2 and 1.6 times faster than 50nm DDR3.
2. These ICs will provide memory solutions to accommodate the new generation of servers optimized for cloud computing and virtualization.
3. Samsung says the power savings for most new server applications using 30nm DDR3 will be about 20 percent greater than applications that use 50nm-class DDR3.
4. According to Samsung when combined with new multi-core PC platforms, Samsung 30nm-class 4GB DDR3 solutions for PCs can operate 60% faster than two 50nm-class 2GB DDR3 solutions, using 65% less power. These chips provide a 155 percent overall increase in productivity over Samsung's 50nm-class process.

For more information visit: www.samsung.com/GreenMemory