Date: 20/07/2010

New automotive qualified PIN photodiodes and NPN planar phototransistors from Vishay

Vishay has unveiled the AEC-Q101-qualified VEMD25x0X01 high-speed silicon PIN photodiodes and VEMT25x0X01 NPN planar phototransistors. These devices come in 1.8-mm gullwing and reverse gullwing surface-mount packages, the photo detectors are sensitive to visible and near infrared radiation and offer a compact footprint of 2.3 mm by 2.3 mm by 2.8 mm. These devices are suggested for light curtains, miniature switches, encoders, and photo-interrupters in metering, automotive, and printer applications; and detectors for visible and infrared emitter sources in proximity applications.

The photodiodes Offers a 12-µA light current and spectral sensitivity range of 350 nm to 1120 nm while the phototransistors offer a light current of 6 mA and spectral sensitivity range of 470 nm to 1090 nm. Both devices feature a 1-nA dark current, ± 15° angle of half sensitivity and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01.

The VEMD25x0X01 and VEMT25x0X01 devices can remain on the plant floor for up to four weeks, they have a MSL of 2a, per J-STD-020. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, are halogen- free according to the IEC 61249-2-21 definition, and are compatible with lead (Pb)-free reflow solder assembly.

Device Specification Table:

Part number Type Package Spectral bandwidth (nm) Wavelength of peak sensitivity Light current, typ.
VEMT2500X01 Phototransistor Reverse Gullwing 470 to 1090 850 nm 6 mA
VEMT2520X01 Phototransistor Gullwing 470 to 1090 850 nm 6 mA
VEMD2500X01 Photodiode Reverse Gullwing 350 to 1120 900 nm 0.012 mA
VEMD2520X01 Photodiode Gullwing 350 to 1120 900 nm 0.012 mA


Operating temperature range: - 40 °C to + 100 °C

Availability: Now

For more information visit: http://www.vishay.com.