Date: 09/07/2010

RF transistors for LNA stage in wireless communication equipments

Infineon has released new RF transistors with electrostatic discharge (ESD) protection to design various reliable, high sensitivity wireless communications devices. These bipolar transistors are available in the same packages as previous generation devices thus ensuring an easy upgrade path.

These transistors when used as Low Noise Amplifier (LNA) stage of the RF signal chain reduce the risk of electrostatic discharge. These RF transistors are suggested for various wireless communication applications like mobile phones, WLAN routers, WiMAX and GPS modules, set-top boxes, active antenna or WiFi data cards.

Other features of these RF transistors are:
1. Offers high maximum RF input power with a low noise figure (NF), high gain and high intermodulation robustness.
2. Provide ESD protection of up to 2kV HBM.
3. Maximum input power was increased from 10dBm to 20dBm while the Noise Figure (NFmin) is specified at 0.6dB at 2.4GHz.

"With the introduction of the new ESD protected RF transistors we offer our mobile communication customers the best protection currently available on the market," said Michael Mauer, Senior Marketing Director of RF and Protection Devices at Infineon Technologies. "Leveraging from the broad product portfolio of Infineon, our customers easily find the optimized solution for their application with the right mixture of noise figure, linearity and gain."


Package: The BFP640ESD, BFP720ESD and BFP740ESD come in SOT343 and TSFP-4 packages.

Price: For sampling units the single unit prices range from US$0.40 to US$0.50

Availability: Production starts in July 2010.

For further information visit: www.infineon.com/ESDTransistors