Date: 06/07/2010

60V dual self-protected MOSFETs from Diodes offer higher thermal efficiency

Diodes Inc has made available dual self-protected low side MOSFETs. These devices are suggested for automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability. With an Rthj-a rating of 95OC/W, the SM8 packaged devices offer a thermal efficiency that is 30% better than that of alternative SO8 packaged devices, ensuring cooler running.

The 60V rated N-channel ZXMS6004DT8 and ZXMS6005DT8 devices from the IntelliFET product provide safety features such as over-temperature, overcurrent, over-voltage and input ESD protection on each of their two independent and isolated switching channels. These MOSFETs can handle nominal load currents of 1.2A and 1.8A, respectively and present on-resistances of only 500mO and 200mO. Both devices have an inductive clamping energy rating of 210mJ. Two additional single channel devices have also been announced by Diodes, the ZXMS6005DG and ZXMS6005SG, offering the same level of protection as the duals to competing single channel self protected MOSFET solutions.

For more information visit: http://www.diodes.com