Date: 02/07/2010

80V power MOSFETs from Vishay with on-resistance value of 5.9mO at 10 V

Vishay has unveiled the new ThunderFET SiR880DP, a TrenchFET power MOSFET built on a new low-on-resistance technology. It is an 80-V power MOSFET with an on-resistance rating at a 4.5-V gate drive. This power MOSFET offers low on-resistances of 8.5 mohms at 4.5 V, 6.7 mohms at 7.5 V, and 5.9 mohms at 10 V. Typical on-resistance times gate charge, a key figure of merit (FOM, expressed in nC-mO) for MOSFETs in dc-to-dc converter applications, is 161 at 4.5 V. It is suggested for primary side switching in isolated do-to-dc converters for telecom point-of-load applications. This device is suitable for higher-frequency designs thus allowing 5-V PWM ICs to be utilized.

Package:
The SiR880DP is 100 % Rg- and UIS-tested. The PowerPAK SO-8 MOSFET is halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Availability: Now

For more information visit: http://www.vishay.com