Date: 25/06/2010

ProMOS successfully produce 1Gb DDR3 DRAM using Elpida's 63nm technology

ProMOS has successfully made trial-version of the 1Gb DDR3 DRAM chip by employing Elpida's 63nm (65nm-XS, Super-shrink) technology, at ProMOS's Taichung fabrication site. The test results of the trial production have shown that the device parameters are within product specifications and the product is fully compatible for applications in PC, digital consumer and mobile markets.

Engineers from the two companies have been working closely in the past couple months to adjust and experiment process recipes to account for the vast differences in manufacturing equipment between the two companies.

Dr. M. L. Chen, Chairman and President of ProMOS Technologies, noted that the successful completion of the first trial lot clearly demonstrated the robustness of Elpida's advanced DRAM technologies. "This is another proof of Elpida's DRAM technology excellence. The chip size of this 1Gb DDR3, designed in 63nm, is as small as the chip sizes of other companies' products, designed in 5Xnm technologies," In addition, he also praised engineers from both companies for the technical excellence exhibited in overcoming many obstacles to complete this major milestone on schedule.

"We are very pleased to see the successful execution of the first trial lot. My congratulations to engineers from both companies for a job well done and for the professionalism they demonstrated through team-work and collaboration," stated Yukio Sakamoto, President and CEO of Elpida Memory.

For more information visit: www.promos.com.tw