Date: 11/06/2009

Dual LDMOS integrated power amplifiers supporting doherty mode

Infineon has launched a dual integrated LDMOS power amplifier for wireless/RF network/cellular base stations. By packing two LDMOS amplifiers in single package these new devices can be used to design Doherty amplifiers. Doherty amplifiers use a separate amplifiers units for normal and peak power levels which are suggested for 3G and 4G systems.

Two of the new devices operate in the 1800 - 2200 MHz frequency range for WCDMA, LTE and TD-SCDMA applications, with output power of either 30 Watts or 40 Watts. The third device operates in the 700 - 1000 MHz for WCDMA, LTE and GSM/EDGE applications, with output power of 30W.

These new dual LDMOS integrated amplifiers support multi-carrier operation from a cell site. Multi-carrier and multi-band amplifier designs are also supported by wide RF (radio frequency) modulation bandwidth.

Product specification brief:

PTMA080304M device used in GSM/EDGE application at 28 Volts and 960 MHz, has 30 dB gain and 28 percent efficiency with Power output of 2 x 6W.

PTMA210304M for 2-carrier WCDMA application at 28 Volts and 2140 MHz, has Power output of 2 X3W with 29 dB gain, 22 percent efficiency and ACPR (Adjacent Channel Power Ratio) of -48 dBC.

PTMA210404FL, in a Doherty-based design for a 6-carrier TD-SCDMA at 28 Volt, 2017 MHz has a 7.5 dB PAR and 10W Power output average has gain of 27 dB, 35 percent efficiency and ACLR of -34dBc.


The PTMA080304M and PTMA21034M are available in 20-lead molded plastic packages and the PTMA21040FL is available in a thermally enhanced open cavity package. All are ROHS compliant and are available in volumes.