Date: 03/05/2009

Hynix developed mobile 1Gb DDR2 DRAM using 54nm process technology

Hynix Semiconductor has said, it has developed the world's first mobile 1Gb DDR2 DRAM using 54nm process technology.

This device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, with a bandwidth of 4.26GB/s(Giga byte per second) on a single channel device and 8.52GB/s on a dual channel. This memory IC offers 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip.

Hynix claims, 1Gb DDR2 DRAM consumes 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.

This JEDEC standards compliant memory chip is ideal for mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life.
The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements. Hynix plans to start mass production of this product in the second half of year 2009.