Date: 08/04/2009

MOSFET and IGBT gate driver IC for hybrid/electric vehicle powertrain applications

International Rectifier (IR) has launched a new low voltage power MOSFET and IGBT gate driver IC for automotive applications including general-purpose motor drives, automotive DC-DC converters and hybrid electric vehicle powertrain drives.

The AUIRS4427S is qualified to AEC-Q100 standards. The output drivers feature a high pulse current buffer stage for minimum driver cross-conduction and matched propagation delay for both channels. Negative voltage spike (Vs) immunity is provided to protect against high-current switching and short circuit conditions.


"With its benchmark negative voltage spike immunity and matched propagation delay, the AUIRS4427S is an extremely rugged dual low-side driver that enables fast switching speeds making the device ideally suited to high power DC-DC converters and powertrain applications," said Henning Hauenstein, vice president of IR's automotive products.

The key features and technical specifications of this driver are,

1. Compatible with 3.3V and 5V logic voltage levels of CMOS or LSTTL output type
2. Features gate voltage (VOUT) up to 20V
3. Provide CMOS Schmitt-triggered inputs, two independent gate drivers, and outputs in phase with inputs.
4. Output Voltage: 6 Volts to 20 Volts
5. Io+ and Io-: 2.3 Amps and 3.3 Amps
6. Switching time: ton = 50 nano seconds, toff = 50 nano seconds
7. Package: SOIC-8

Availability: Now in volumes
Pricing: Each US$0.51 in 100K pieces


For further details visit www.ir.com