Date: 06/04/2009

IXYS GenX3 IGBT family now with 1200V VCE voltage

IXYS has added new members of IGBT to its family of IGBT called GenX3 withstanding 1200 Volts of collector to emitter voltage.

These devices can safely work in hard switching application without snubber devices by featuring avalanche capabilities and a square reverse bias safe operating area.

The suitable applications for power switching component are solar inverters, automatic voltage regulators, industrial battery chargers, wind turbine inverters, capacitor discharge circuits, electronic circuit breakers, resonant power conversion circuits, induction heating for industrial processing, uninterruptible power supplies, motor drives, switch-mode power supplies, power factor correction circuits and welding machines.

IXYS' 1200V GenX3 IGBTs are available in standard and ISOPLUS packages with collector current ratings from 20 Amperes to 120 Amperes @ Tc=110 Deg C.
Also available in standard packages which include TO-263, TO-247, PLUS247, TO-220, TO-264 and TO-268.

The design engineer would prefer to go for IGBT instead of MOSFET when his collector to emitter voltage requirements exceeds 1000V. IXYS enhancement of this family to withstand 1200 Volts increases the worthiness of this family for above-mentioned applications.

The other design parameters engineers have to consider for selecting IGBT instead of MOSFET are, their application should be of low frequency, low duty cycle, and small load variation.

Read this nice paper by International Rectifier with title "IGBT or MOSFET choose wisely" to help you in educating differences between IGBT and MOSFET.

The link is http://www.irf.com/technical-info/whitepaper/choosewisely.pdf