Date: 26/02/2009

High power, low RDS (ON), MOSFETS for isolated DC-DC bus converters

Toshiba America Electronic Components expanded its lineup of MOSFETs with a selection of higher power 40V, 60V and 80V devices suited for use in the primary side switch of an isolated DC-DC bus converter in mobile communications applications. These N-Channel devices can also be used in non-isolated DC-DC converters.

1. The seven new MOSFETs feature fast switching, enabled through lower gate charge (QSW) and lower gate resistance (Rg ).
2. Use the latest (sixth) generation trench process in the Toshiba fast switching series. This process enables reduction in gate switch charge and on-state resistance (RDS(ON) ) resulting in high power efficiency.
3. The three 40V MOSFETs: TPCA8045-H, TPCA8046-H and TPCA8047-H, feature drain current of 46 Amps (A), 38A and 32A respectively, and a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.
4. The three 60V devices: TPCA8048-H, TPCA8049-H and TPCA8050-H feature drain current of 35A, 28A and 24A respectively, and also provide a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.
5. The seventh device in the expanded lineup, TPCA8051-H, is an 80V MOSFET with drain current of 28A, RDS(ON) (typ.) of 6.0 mO.

Availability: Samples of the seven new Toshiba UMOS VI-H DC-DC converter MOSFETs are available now

Price: starts at $0.80

Package: offered in SOP advance packages with Aluminum Strap (Al-Strap) connections

For more details visit: www.toshiba.com