Date: 05/02/2009

First validated 40-nanometer class DRAM

Samsung Electronics has developed and validated the first 40 nanometer class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) have been certified in the Intel platform validation program for use with the Intel GM45 series Express mobile chipsets.

The migration to 40 nm class process technology is expected to accelerate the time-to-market cycle by 50% to just one year. Samsung has plans to apply its 40 nm class technology also to develop a 2Gb DDR3 device for mass production by the end of 2009.

The new 40 nm class process technology will drive further reductions in voltage against a 50 nm class device, which translate into about a 30% power savings. In addition, Samsung expects that its 40 nm process node will mark a significant step toward the development of next generation, DRAM technologies such as DDR4.

For further information visit: www.samsung.com