Date: 30/01/2009

GaN RF power amplifier for wireless applications

Microwave Technology, Inc. (MWT) division of IXYS has introduced a family of three RF power amplifier products with output power up to 10 watts based on GaN device technology. The power amplifiers are MGA-242740-02, MGA-495922-02, and MGA-4959-02, targeted at 802.16d/e WiMax applications and 802.11 WLAN related applications with three frequencies bands, 2.4 - 2.7 GHz, 3.3 - 3.8 GHz, 4.9 - 5.9 GHz GHz, respectively.

All three parts have output power of 10Watt (40 dBm) measured at 3 dB gain compression point and linear power gain range from 12 - 15 dB. These GaN based RF power amplifier parts have achieved 23% power added efficiency at 2W (33dBm) linear power (burst power) with 2.5% EVM (Error-Vector-Magnitude) under the 64 QAM 802.16 WiMax digital signal modulation scheme.

The GaN based power amplifies, biased at 28V on drain with quiescent current between 80 - 300 mA, are available in various packages including the surface mount 02 packages. The MTBF (mean-Time-Before-Failure) for those GaN based microwave/RF power amplifiers is over 100 years at 85C ambient temperature.

Availability: The evaluation boards for the power amplifiers in 02 packages
are available now.

For more details visit: www.ixys.com