Date: 30/01/2009

GaN HEMT microwave transistors for telecommunications applications

Cree, Inc announced the sample release of two 120W GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors can provide better performance compared to other technologies such as GaAs MESFET or Si LDMOSFET.

The features include,

1. The new transistors consist of single, input-pre-matched GaN HEMT devices providing more than 120 watts of saturated power.
2. They provide convenient values of input and output impedances to allow device matching over greater than 30% instantaneous bandwidths.
3. The CGH21120F is designed to be used primarily in the 1800 - 2300 MHz frequency range
4. The CGH25120F is optimized for the 2300 - 2700 MHz range.
5. The CGH21120F provides more than 110 watts of peak CW power at 70% efficiency with a gain of 16 dB when operated at 28 volts.
6. Under W-CDMA 3GPP stimulus, the transistor provides 25 watts average power with 40% efficiency in Class A/B operation.
7. The CGH21120F and CGH25120F complement the Cree's RoHS-compliant HEMT microwave transistors for WiMAX applications available for 802.11x OFDM average power levels of 2W, 4W and 8W.

Package: industry-standard ceramic-metal packages.

For additional information, please refer to www.cree.com