Date: 20/01/2009

High-voltage power MOSFETs for AC/DC and ballast applications

Toshiba America has introduced a new series of high-voltage p-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings.
The first 13 devices in the p-MOS VII series include seven 500V and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as AC adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400V to 650V and provide a wide selection of electrical characteristics, including drain current, RDS(ON) and gate capacitance of MOSFET.

"As a result of the optimization of the cell design, Toshiba has been able to reduce gate charge and capacitance without losing low RDS(ON) characteristics," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC. Compared to the company's previous generation p-MOS VI MOSFETs, total gate cha r ge has been reduced approximately 40 percent, output capacitance has been reduced 25 percent, reverse transfer capacitance has been reduced 60 percent and input capacitance has been reduced 10 percent1.

The first seven 500V MOSFET devices in the p-MOS VII series provide a selection of drain current from 5 Amp (A) to 15A (max.), with a range of RDS(ON) , gate charge and avalanche energy to meet various application requirements. (Please see specification table next page.) The TK5A50D features drain current of 5A and RDS(ON) of 1.5 W (max.) ; the 7A TK7A50D has RDS(ON) of 1.22O (max.); the 8A TK8A50D has RDS(ON) of 0.85 W (max.); the 10A TK10A50D has RDS(ON) of 0.72O (max.); the 12A TK12A50D has RDS(ON) of 0.52 W (max.); the 13A TK13A50D has RDS(ON) of 0.47O (max.); and the 15A TK15A50D has RDS(ON) of 0.3 W (max.) . These devices are packaged in Toshiba TO-220SIS packages, which are equivalent to industry standard TO-220F (isolated) packages, with dimensions of 10.0mm x 4.5mm x 17.8mm.

The initial p-MOS VII series includes six 600V devices with drain current ranging from 3.5A to 13A (max.). A 3.5A device, the TK4A60DA, has RDS(ON) of 2.2O (max.); the 6A TK6A60D has RDS(ON) of 1.25 W (max.); the 7.5A TK8A60DA has RDS(ON) of 1.0O (max.); the 10A TK10A60D has RDS(ON) of 0.75O (max.), the 11A TK11A60D has RDS(ON) of 0.65O (max.); and the 13A TK13A60D has RDS(ON) of 0.43O (max.).

Price: For sample quantities start at $0.75.
Availability: Now

For further details visit www.toshiba.com/taec/