Date: 06/01/2009

Power transistors for S-Band pulsed radar for defense applications

Microsemi Corporation announced the release of a new family of power transistors and modules designed for S-Band pulsed radar in air traffic control and military applications.

The new devices include 65W and 100W power transistors, designated 3134-65M and 3134-100M, and two power solution modules designated 3134-180P and 3134-200P, rated at 180W and 200W respectively. All are designed for radar applications employing the 3.1 to 3.4 GHz S-Band frequencies.

3134-200P power solution module key features:

1. Designed for S-Band Radar -- 3.1-3.4 GHz
2. Medium Pulse Format -- 100 us, 10%
3. Excellent Power Output -- 200W
4. High Power Gain -- 8.0 dB
5. Collector Efficiency -- 40%
6. Compression -- In Compression
7. Load Mismatch -- VSWR 2:1
8. Vcc -- +36V
9. Package -- Hermetically Sealed

Availability: Samples are available now.
For more details please visit: www.microsemi.com