Date: 19/12/2008

512GB Solid State Drive using 43nm Multi-Level Cell NAND

Toshiba Corp announced the expansion of their line up of NAND-flash-based solid state drives (SSD) with the 2.5-inch 512-gigabyte SSD and a broad family of fast read/write SSDs based on 43-nanometer Multi-Level Cell NAND. The new drives provide a high level of performance and endurance for use in notebook computers, gaming and home entertainment systems.

In addition to the 2.5-inch, 512GB drive, the 43nm NAND SSD family also includes capacities of 64GB, 128GB, and 256GB, offered in 1.8-inch or 2.5-inch drive enclosures or as SSD Flash Modules.

These drives can provide a maximum sequential read speed of 240MB per second and maximum sequential write speed of 200MBps enabling an improvement in overall computing experience, and faster boot and application loading times. The drives also offer AES data encryption to prevent unauthorized data access.

The device will be showcased at International CES 2009 in Las Vegas, Nevada from January 8 - 11, 2009.

Availability: Samples will be available in the first quarter of 2009, with mass
production in the second quarter.

For more information on Toshiba SSDs, please visit www.ssd.toshiba.com