Date: 08/12/2008

Hynix is first in achieving 2Gb capacity in single package Mobile DRAMs

Hynix Semiconductor has developed the world's first 2Gigabit mobile DRAM using 54nm process technology. This product provides twice as much storage capacity over current 1Gb mobile solution which has been the highest density offered among the mobile DRAM products in MCP(Multi Chip Package), PoP(Package on Package) platform. The maximum operating speed is of 400Mbps(Megabits per second) at 1.2V power supply and processes up to 1.6 Gigabytes of data per second with a 32-bit I/O. Low power consumption is added feature of this chip.

This device offers flexible options to meet the specific needs of the customers for both SDRAM and DDR DRAM interfaces, and both x16 and x32 organizations on a single chip.
This product meets JEDEC standard and is suited for the applications of MID(Mobile Internet Device) and UMPC(Ultra Mobile PC) as well as higher density required products.

Hynix plans to start mass production in the first half of next year in order to satisfy the increasing demand for high performance mobile applications.