Date: 08/12/2008

20 V and 30 V power MOSFETs for low switching losses & faster switching

Vishay Intertechnology expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20 V and two 30 V n-channel devices which offer TurboFET technology.

The new technology utilizes a new charge balanced drain structure to lower the gate charge by up to 45 %, enabling lower switching losses and faster switching.

1. The 20 V SiS426DN device feature On-Resistance Times Gate Charge Figure Of Merit (FOM) down to 76.6 mO-nC at 4.5 V and 117.60 mO-nC at 10 V in PowerPAK 1212-8 Package Type.
2. It also features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive.
3. A PowerPAK SO-8 version of the 20-V SiS426DN device, the SiR496DP, is also available for high -current applications.
4. Lower gate charge translates into more efficient switching at all frequencies, and in particular gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in dc-to-dc converters.
5. The 30-V TurboFET offering includes the Si7718DN in the PowerPAK 1212-8, and the Si7784DP in the PowerPAK SO-8. Both MOSFETs offer typical gate charge of 13.7 nC at 4.5 V and 30 nC at 10 V, and on-resistance times gate charge FOMs of 112.34 mO-nC at 4.5 V and 180 mO-nC at 10 V.
6. Can be used as the high-side MOSFET in synchronous buck converters, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion.
Packaging: SiS426DN: PowerPAK 1212-8
SiR496DP: PowerPAK SO-8
Si7718DN: PowerPAK 1212-8
Si7784DP: PowerPAK SO-8
Availability: Samples and production quantities of the new devices are available now with lead times of 10 to 12 weeks for large orders.

Vishay can be found on the Internet at www.vishay.com