Date: 28/11/2008

Rugged LDMOS transistor for L-band radar applications

NXP Semiconductors has launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications delivering record RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

NXP's LDMOS L-band RF power transistor offers greater than 50 percent drain efficiency, and gain of 17dB.

Key performance parameters for NXP's L-band RF transistor (BLL6H1214-500), include:
--- 500W peak output power (at 1.4GHz, 100µs pulse width, 25 percent duty cycle)
--- 17dB gain
--- 50 percent drain efficiency
--- Improved ruggedness
--- Overdrive without risk up to 5dB
--- Improved pulse droop (0.2dB)
--- Supply Voltage 50V
--- Non-toxic packaging and ROHS compliance

NXP's device combines the power density of bipolar with the advantages of LDMOS technology for L- band Radar design, and allows for a replacement of the BeO containing packages by an environmentally friendly ceramic package.