Date: 22/11/2008

Wideband high-power RF transistor family with power-band technology

TriQuint Semiconductor announced the availability of a high power discrete RF transistor family for broadband applications including radar, signal jammers and wireless communications.

The key features are,

1. Can deliver power up to 50Watts and high efficiency performance across a much wider frequency range, from 500 MHz to 3 GHz."
2. The improved efficiency and bandwidth will pay system dividends in the form of less PCB area dedicated to RF, longer battery life, the opportunity to reshape end products and reduce size, as well as less need for thermal management.
3. PowerBand technology enables greater efficiency for mobile as well as ground-based RF networks infrastructure applications.
4. PowerBand devices is developed using gallium arsenide (GaAs), gallium nitride (GaN), as well as RF LDMOS (laterally diffused metal oxide semiconductor) technologies.
5. TriQuint's first family of PowerBand devices offer output power from 10-50 Watts; operating voltages range from 12-28V and operational frequency ranges from 500 MHz to 3 GHz.

For more details visit TriQuint at www.triquint.com