Date: 03/11/2008

16 Gb monolithic flash memories manufactured using 43nm technology

Toshiba Corp has announced a new line-up of 43nm Single-Level Cell (SLC) NAND flash memory products available in densities ranging from 512Mbits1 to 64Gbits2 and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate 43nm monolithic 16Gb chips, the highest density SLC NAND chips available.

Spec Table:

Product Number TC58NVG4S2EBA00
Density 16G bit
Power 3.3V
Program time 400ms/ page (Typ.)
Delete time 4ms/block (Typ.)
Access time 40 ms/(1st)
Size 14mm x 18mm
Availability: 1st Quarter 09