Date: 26/10/2008

MOSFETs with low on-resistance and low on-resistance times gate charge

The new SiR476DP from Vishay provides a maximum on-resistance of 2.1 m ohms at a 4.5-V gate drive and 1.7 m ohms at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25 nC at 4.5 V. The lower on-resistance and gate charge translate into lower conduction and switching losses.
The SiR476DP can be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient for voltage regulator modules and systems using point-of-load power conversion.

Vishay has also released the 25-V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5 V of 4.2 mO and 9 mO, on- resistance at 10 V of 3.2 mO and 7 mO, with typical gate charges of 20 nC and 8.4 nC.

Packaging: SO-8 package
Lead (Pb)-free, halogen-free, RoHS-compliant: Yes
Availability: Samples and production quantities of the SiR476DP, SiR892DP, and
SiR850DP are available now, with lead times of 10 to 12 weeks for large
orders.

For more details visit: www.vishay.com