Date: 09/10/2008

Microsemi's silicon carbide transistors for VHF & UHF radar applications

Microsemi Corporation launched its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications.
The two new RF power transistors are designated as 0150SC-1250M and 0405SC-1000M. These common gate, class AB, high power transistors utilize the silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively, offering power output, typical 1400W at VHF and 1100W at UHF of peak power.

The benefits of using these devices are:

1. Single-ended design with simplified impedance matching replaces complex push-pull circuitry.
2. Industry's highest peak power reduces system power combining
3. High operating voltage drastically reduces power supply size and dc current demand.
4. Low conducting current significantly minimizes system noise effect.
5. Extremely rugged performance improves system yields 50% smaller size than the highest power devices built with silicon BJT or LDMOS.
6. All gold metallization provides military grade long-term reliability.

0150SC-1250M Specifications:

1. Designed for UHF Radar Application: 150 - 160 MHz
2. Medium Pulse Format: 300 us, 10%
3. Output Power: 1,400W typ, 1,250W min
4. Power Gain: 9 dB
5. Drain Efficiency: 60 % @155 MHz
6. Compression: In Compression
7. Vdd: +125V
8. Ruggedness: Capable of VSWR-T 10:1

0405SC-1000M Specifications:

1. Designed for UHF Radar Application: 406 - 450 MHz
2. Medium Pulse Format: 300 us, 10%
3. Output Power: 1,100W typ, 1,000W min
4. Power Gain: 8 dB
5. Drain Efficiency: 50 % @450MHz
6. Compression: In Compression
7. Vdd: +125V
8. Ruggedness: Capable of VSWR-T 10:1

For more details visit: http://www.microsemi.com