Date: 20/09/2008

Power MOSFETs from ST Micro with low on resistance

ST Microelectronics launched new power MOSFETs families delivering high conduction and switching performance, ruggedness, and footprint savings. The use of SuperMESH3 technology with lower on-resistance guarantees that higher efficiency is obtained. These MOSFETs are ideal of lighting and SMPS applications.

The first devices launched are the 620V STx6N62K3, which will be followed by the STx3N62K3, also at 620V, as well as the 525V STx7N52K3 and STx6N52K3.

The SuperMESH3 technology combines strip topology with an optimized vertical structure, which gives superior dv/dt performance and higher breakdown-voltage margin, thus providing enhanced reliability and safety in lighting and other consumer electrical applications.

The lowest on-resistance per area allows the devices to use smaller packages, which saves footprint and board size. It also reduces the RDS(on) resistance, boosting operating efficiency in applications such as low-energy lamp ballasts. The new technology also reduces reverse-recovery time (Trr), gate charge, and intrinsic capacitance, leading to improved switching performance and enabling higher operating frequencies.

Package & pricing:

1. STx6N62K3 is available in IPAK, DPAK, TO-220, & TO-220FP packages, priced from $0.62 for 1000 pieces.
2. STx3N62K3 at 2.5 Ohms will be available in IPAK, DPAK, D2PAK, TO-220 & TO-220FP packages.
3. STx7N52K3 at 0.98 Ohms will be introduced in DPAK, D2PAK, TO-220 & TO-220FP packages
4. STx6N52K3 at 1.2 Ohms will be available in DPAK & TO-220FP packages.

Availability: will be in volume production by Q4 2008.

Further information on ST can be found at: http://www.st.com