Date: 06/06/2008

Microsemi launches new family of IGBTs and recovery diodes

Microsemi has released a new family of resonant mode combi insulated gate bi-polar transistors (IGBTs) and a new series of low VF ultra-soft recovery diodes.

The IGBTS are for high power applications and implement zero voltage switching (ZVS) and zero current switching (ZCS) topologies that are used in resonant mode and phase shifted bridge switching. These devices are developed to use in welding, induction heating, telecommunications, and medical equipment with power levels of 5000 watts or less.


The new DL Series ultra-soft recovery diodes are designed for applications that use output rectification and other resonant mode circuits, such as phase shifted bridge. These ultra-soft recovery diodes eliminate snubber-circuit and minimize EMI and their low voltage forward reduces conduction loss. The 600V series includes singles, duals, and common cathode configurations.



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