Date: 25/01/2010

High power density power MOSFETs from IR for automotive applications

IR has introduced the AUIRF7739L2 and AUIRF7665S2, a new automotive DirectFET2 power MOSFETs that deliver high power density, dual-sided cooling and low parasitic inductance and resistance for automotive applications.

The AUIRF7739L2 MOSFET is suitable for heavy load motor control applications such as Electric Power Steering (EPS), battery switches and Integrated Starter Alternators (ISA) in Micro Hybrid Vehicles, and chassis, drive train and power train systems.

The AUIRF7665S2 MOSFET is optimized for low gate charge and exhibits low parasitics for fast and efficient switching performance. The DirectFET2 MOSFET is suitable for automotive switching applications such as the output stage of Class D Audio amplifiers, DC-DC converters and fuel injection systems.

Both devices are qualified according to AEC-Q101 standards, and RoHS compliant.

"The AUIRF7739L2 and the AUIRF7665S2 combine the outstanding reliability and performance of the proven DirectFET packaging technology with IR's latest trench silicon process. The new DirectFET2 devices may be optimized by application for next-generation vehicle platforms for ultra-low on-state resistance (RDS (on)), gate charge (Qg) or logic level operation to deliver dramatically improved performance and efficiency, and reduced system size and part count," said Benjamin Jackson, product manager, Automotive Products Business Unit.

The large can features a 60 percent small footprint and 85 percent low profile than a D2PAK.

Specifications:
Part Number Vds Rds(on) typ Rds(on) max Qg (typ)
AUIRF7739L2 40V 0.7mOhm 1.0mOhm 220nC
AUIRF7665S2 100V 51.0mOhm 62.0mOhm 8.3nC


Package:
AUIRF7739L2: DF2 L Can package
AUIRF7665S2: DF2 S Can package
Price:
AUIRF7739L2: Each $2.60 in low volume quantities
AUIRF7665S2: Each $0.46 in low volume quantities
Availability: Now

For more details visit www.irf.com