Date: 25/01/2010

600-V, 0.190-Ohm on-resistance Super Junction FET Power MOSFETs from Vishay

Vishay has extended its Super Junction FET technology with the release of four new 600-V MOSFETs. The new SiHP22N60S, SiHF22N60S, SiHG22N60S, and SiHB22N60S MOSFETs combine their 600-V rating with a low 0.190-Ohm on-resistance at a 10-V gate drive. This low on-resistance translates into low conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) applications in electronic systems such as LCD TVs, PCs, servers, switch mode power supplies (SMPS), and telecom systems.

The key features of the new MOSFETs are,

Low gate charge of 98 nC
High EAR avalanche energy capabilities
Low Figure-of-Merit Ron x Qg
100 % avalanche tested
65 A pulsed and 22 A continuous high peak current capability
dV/dt ruggedness
Effective output capacitance specification
Improved trr/Qrr, and Gate Charge
High power dissipation capability

The new devices offer improved transconductance and reverse recovery characteristics when compared to previous-generation 600-V power MOSFETs, and compliant to RoHS Directive 2002/95/EC.

Package:
SiHP22N60S: TO-220 package
SiHF22N60S: TO-220F package
SiHG22N60S: TO-247 package
SiHB22N60S: TO-263 package

Availability: Now in samples, production quantities available in Q1 2010

For more details visit www.vishay.com