Date: 19/01/2010

Hynix Semiconductor develops 2Gb DDR2 DRAM for mobile electronic devices

Korean DRAM maker Hynix Semiconductor has developed what it claims the world's first 2Gb(Gigabit) Low Power DDR2 DRAM for mobile electronics gadgets such as smart phones, smart books, Tablet PC and netbooks.

This DRAM chip operates at 1,066 Mbps(Megabits per second). Higher memory storage can be achieved by using 3 dimensional packaging of multiple numbers of 2Gb DDR2 DRAM chips. The operating voltage of this chip can be down to 1.2V and can process up to 4.26GB(Gigabytes) of data per second with a 32-bit I/O, providing high bandwidth. Hynix claims this device consumes 50% less power than existing mobile memory solution's case.

This JEDEC standards compliant memory IC will be produced in volumes in the first half of 2010.

The demand for small form-factor mobile-computing devices is expected to grow faster in 2010.Samsung and Hynix are leading ahead of other semiconductor vendors in improving the speed, size, power consumption and capacity of semiconductor memory devices compared to other memory chips makers.