Date: 07/01/2010

128GB, 32nm Multi-Level Cell NAND-flash-based SSDs from Toshiba

Toshiba has expanded its 32nm Multi-Level Cell NAND-flash-based solid state drives (SSDs) family with two new 128-gigabyte (GB) Half-Slim /mSATA SG Series SSD modules, which are suitable for the applications such as mini-mobile/netbook PCs, and a third generation, high performance HG3 Series featuring high performance read/write SSDs.

The new HG3 generation SSD is for use in notebook computers, gaming and home entertainment systems.

Toshiba says the 128GB modules are only one seventh the volume and one eighth the weight of 2.5-inch form factor SSDs, and consume a fraction of the power.

An advanced MLC controller supports high read speeds, parallel data transfers and wear leveling to optimize performance, which increases reliability and endurance. The drives enable better system responsiveness with a maximum sequential read speed of 250MB per second (MBps) 2 and maximum sequential write speed of 180MBps, enabling an improvement in overall computing experience, with fast boot and application loading times.

Both new series support the TRIM Command implemented in Windows 7. In earlier models of solid-state drives, a data block from which data was deleted was flagged as not in use and ignored by the controller. Once all the memory cells were written to once, this approach slowed down SSD operation. TRIM enables the OS to tell the SSD controller that the data can be actually deleted, freeing the blocks for subsequent use and maintaining SSD performance across its life.

Availability: In samples from first quarter (January to March) of 2010, with mass production in the second (April to June) quarter

For more details visit ssd.toshiba.com