Date: 24/12/2009

Low on-resistance, 12-V p-channel MOSFET targeting handheld electronic apps

Vishay has introduced the SiB455EDK, a new 12-V p-channel TrenchFET Gen III power MOSFET that offers low on-resistance from 27 mOhm at 4.5 V to 130 mOhm at 1.5 V, which is suitable for load, PA, and battery switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players.

Vishay says, the SiB455EDK uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts on-resistance for a p-channel MOSFET in half.

The key features of this device are,

Halogen-free free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC
1500 V (typ) of ESD performance
100 % Rg tested

The new device is also the only 12-V MOSFET with both a gate-source voltage of 10 V and an on-resistance rating at 1.5 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs for smaller input voltages.

Package: Thermally enhanced PowerPAK SC-75 (1.6-mm x 1.6-mm) package
Availability: Now in samples, production quantities will be available in Q1 2010

For more details visit www.vishay.com