Date: 23/12/2009

High-density 64GB embedded NAND flash memory device from Toshiba

Toshiba has released a new 64-gigabyte embedded NAND flash memory device that combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's 32nm process technology, and also integrates a dedicated controller. The 64GB NAND flash memory device is suitable for digital consumer products including Smartphones, mobile phones, netbooks and digital video cameras applications.

The key features of the 64-gigabyte embedded NAND flash memory device are,

The JEDEC/MMCA V4.4 compliant interface handles essential functions, including writing block management, error correction and driver software, to minimize development costs and speed up time to market.
A wide product line-up supports capacities from 2 to 64GB
The high-capacity 64GB embedded devices can record up to 1,070 hours of music at a 128Kbps bit rate, 8.3 hours of full spec high definition video4 and 19.2 hours of standard definition video.
The new chips support the advanced partitioning and security of e-MMC V4.4. Multiple storage areas can be configured, including several enhanced memory areas for system files or code, and a multi-level cell (MLC) area for data storage.

"The e-MMC interface has become the most widely embraced embedded NAND solution with a built-in controller to simplify integration into system designs. With the addition of higher density, Ver 4.4 e-MMC compliant product offered as single package solutions or as part of a multi-chip module combined with DRAM, Toshiba can help designers reduce memory subsystem space requirements," said Scott Beekman, business development manager, mobile communications memory for TAEC.

Toshiba says, the e-MMC Ver 4.4 devices are available in a standard configuration with the NAND flash and built-in controller or in a multi-chip module (MCP) with DRAM or other memory to reduce the memory subsystem requirement to one chip. Toshiba MCPs offer multiple memory technologies such as NAND Flash, NOR Flash, Pseudo SRAM (PSRAM), and low-power SDRAM in a single package to simplify layout and save valuable board space in increasingly complex, feature-rich cellular phones.

Operating temperature range: -25 to +85 degrees C

Package: Small FBGA package, which is 14mm x 18mm x 1.4mm and has a signal layout compliant with JEDEC/ MMCA V4.4.

Availability: Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

For more details visit www.asia.toshiba.com