Date: 21/12/2009

Power MOSFETs with extra super-junction device delivers low on-resistance per die area

ST Micro has announced the release of added options for its MDmesh V power MOSFETs, with a new device that delivers the low on-state resistance for 650V MOSFETs.

ST's MDmesh V technology features increased efficiency, high power density and low operating temperatures leading to better reliability in applications such as PC and server power supplies, solar-power converters, welding power supplies and UPS equipment, where conduction loss has a major influence over efficiency.

The new device is the STW77N65M5, which offers an RDS (ON) of 38mOhm in the TO-247 package.

The key features of the MDmesh V power MOSFETs are,

Fast switching
Higher VDSS rating
High dv/dt capability
Easy to drive 100% avalanche tested
Elevated energy savings
Higher power density
High electrical efficiency
More compact and reliable designs

"The MDmesh V family combines fifth-generation super-junction technology with PowerMESH horizontal layout, giving superior performance compared to the competing devices," said Maurizio Giudice, Marketing Director, Power MOSFET Division, STMicroelectronics. "The industry's lowest RDS (ON) per die area delivers efficiency advantages in any package style. Designers can use this superiority to improve performance and reduce overall size by replacing multi-parallel networks of conventional MOSFETs with a far smaller number of MDmesh V devices."

Package:
MDmesh V power MOSFETs: TO-220, TO-220FP, I2PAK, D2PAK , DPAK and IPAK package

Price:
STW77N65M5: At $10.00 for orders over 1k pieces

Availability:
STW77N65M5: Now in production orders

For more details visit www.st.com/mdmeshv