Date: 02/12/2009

Sub-32nm lithographic patterning ashable hardmask Plasma Enhanced CVD films

Novellus has developed a suite of ashable hardmask (AHM) plasma-enhanced chemical vapor deposition (PECVD) films enable sub-32nm lithographic patterning, and up to 7 percent of device yield improvement with 25 percent high etch selectivity compared to amorphous carbon films when coupled with Novellus' integrated edge bevel removal (EBR) technology.

Sub-32nm device design rules require high aspect ratio (AR) patterning for both logic and memory devices. At these advanced geometries, PECVD based amorphous carbon films have high etch selectivities and better mechanical properties than photoresists. Additionally, films of this nature enable more accurate pattern transfer from the photoresist to the substrate without complications such as pattern collapse and line bending. These amorphous carbon films are also used for double patterning schemes, enabling cost effective, high-density patterning.

In addition to enhanced die yield, Novellus' HST AHM films also provide a wide process window in a high volume-manufacturing environment. Conventional amorphous carbon films deposited at high temperatures are prone to moisture absorption at a faster rate. However, the multi-station sequential deposition (MSSD) architecture of the Novellus VECTOR PECVD platform enables better hermeticity performance by incorporating process interfaces, which help to block moisture uptake.

"Novellus' HST AHM films meet the high density, high aspect ratio patterning requirements necessary for sub-32 nm devices," said Kevin Jennings, senior vice president for Novellus' PECVD business unit. "Coupled with the proven productivity of the VECTOR platform, Novellus' HST AHM solution is the low cost, high volume manufacturing choice for these advanced optical films."

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