Date: 28/12/2006

Samsung develops 1GB low power DDR memory for cellphones

Samsung has developed a monolithic 1GB DRAM as a replacement over stacked package for mobile handheld products. This new chip has temperature-sensing feature and is self refreshing. By sensing the temperature, it optimizes the capacitor refresh cycle to save power either in standby mode or full power mode.
This device is 20% thinner than stacked memory chip. Samsung also has plans to bring flash memory combined multi-chip package.
However this device will be available only in 2Q07.