Date: 24/11/2009
20V Integrated P-channel MOSFET and schottky diode in MicroFET thin package
Fairchild Semiconductor has launched the FDFMA2P859T, a new 20V Integrated P-Channel PowerTrench MOSFET and Schottky diode in MicroFET thin package targeting battery charging and power-multiplexing applications.
The FDFMA2P859T features a MOSFET with low on- resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The FDFMA2P859T device provide low reverse leakage current of 1ľA at Vr=10V, for the Schottky diode.
With a 0.55mm package height, the FDFMA2P859T device suitable for low profile designs such as portable and wearable cell phones, media players and medical devices.
Price: Each $ 0.39 for 1k pieces
Availability: Now in samples
For more details visit www.fairchildsemi.com