Date: 21/11/2009

20V p-channel TrenchFET Gen III Power MOSFET in 2mmx 2mm PowerPAK SC-70 package

Vishay has introduced the SiA433EDJ, a new 20-V p-channel power MOSFET that offers low on-resistance from 18 mOhm at 4.5 V, 26 mOhm at 2.5 V and 65 mOhm at 1.8 V in 2mmx 2mm compact PowerPAK SC-70 package. These values are 40 % low at 4.5 V and 30 % low at 2.5 V than the p-channel device.

The SiA433EDJ is built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This technology allows a sub-micron pitch process that cuts the on-resistance for a p-channel MOSFET nearly in half.

The new MOSFET is a 20-V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter high gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safe designs in applications with small input voltages.

The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance of the MOSFET translates into low conduction losses, saving power and prolonging battery life between charges in these devices.

To reduce field failures due to ESD, the device features a built-in Zener diode for ESD protection up to 1800 V. The MOSFET is halogen free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC, and 100 % Rg-tested.

Package: 2mmx 2mm PowerPAK SC-70 package

Availability:
SiA433EDJ TrenchFET power MOSFET: Now in samples, production quantities will be available in Q1 2010.

For more details visit www.vishay.com